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JAZZ SEMICONDUCTOR ANNOUNCES AVAILABILITY OF ITS 0.13 MICRON
SiGe BiCMOS PROCESS FOR HIGH PERFORMANCE RF DESIGN
Foundry Offers Cost-Effective 0.13µm SiGe BiCMOS Process Platform with High Performance Passives for RF/Analog System-on-Chip (SoC) Applications
NEWPORT BEACH, Calif., June 14, 2006
-- Jazz Semiconductor, an independent semiconductor wafer foundry,
today announced the availability of process design kits for its
SBL13 process, a 0.13µm SiGe BiCMOS technology combining high
performance, low cost SiGe transistors with its low-power (1.2V),
0.13µm digital CMOS platform, CA13. The process also includes
a suite of high-density passive elements for more aggressive scaling
of analog device area in complex Analog Systems-on-Chip (Analog
SoCs). The Jazz SBL13 process technology enables the design of cost-effective
and highly integrated circuits for most wireless applications that
require the combination of dense digital logic with high performance
RF and analog functionality. Examples of products that can take
advantage of the SBL13 process include mobile TV tuners, cellular
transceivers and WLAN transceivers.
Jazz continues to expand its specialty process offerings, which
currently span geometries from 0.5µm to 0.13µm and technologies
that promote high performance, high voltage and high levels of integration.
The latest addition is the SBL13 platform, created to address the
growing need for a low cost RF process that incorporates bipolar
devices for better noise and frequency performance. The SBL13 SiGe
bipolar device is a Silicon Germanium transistor added to an aluminum-based
0.13µm CMOS process with minimal additional masks. The combination
results in a process that is comparable in mask count to an industry
standard 0.13µm RFCMOS process which typically also requires
a more costly copper metallization scheme. In addition to the low cost
bipolar, the process includes a stacked MIM capacitor for aggressive
scaling of capacitance area and a thick top metal for inductor performance.
SBL13 uses a 1.2/3.3V dual gate oxide process to form
the base CMOS, with the addition of SiGe transistors offering a
range of Ft, Fmax, and BVceo for design flexibility, with an Ft
up to 90GHz, Fmax up to 123GHz and BVceo up to 6V. The process
also supports up to six layers of aluminum metal, a 5.6 fF/µm²
linear MIM capacitor, a triple well module, Nwell resistor and unsilicided
poly resistor. The top metal is 2.8µm thick aluminum to support
high-Q inductors. The technology is offered through Jazz Semiconductor's
integrated design environment supporting the latest EDA tools and
flows for fast and accurate design cycles of RF, analog and mixed-signal
products.
"The Jazz SBL13 process is the first of its kind in addressing
the need in the wireless market for a low cost Silicon Germanium
process at the 0.13µm node and the combination of features
offered by Jazz is suited for many emerging markets including mobile
TV, WLAN and 3G," said Joanne Itow, managing director, Semico
Research. "These markets require the combination of digital
content with good analog performance, which historically does not
scale in more advanced geometries without a feature set comparable
to the one offered by Jazz SBL13."
"We continue to build out our SiGe roadmap by listening to
our customers, understanding end applications, and using our modular
infrastructure to develop the right combination of process features
to address the demands of those applications," said Marco
Racanelli, vice president of technology and engineering, Jazz Semiconductor.
"Our SBL13 offering is designed to provide the low power and
high performance attributes of the 0.13 micron node without the
high cost typically associated with it by incorporating an aluminum
back-end as well as a very streamlined architecture for the bipolar
device. The process can thus be used not only to provide power,
noise and performance advantages but can also be adopted in more
cost sensitive segments of the market."
About Jazz Semiconductor
Jazz Semiconductor is an independent wafer foundry primarily focused
on specialty CMOS process technologies, including High Voltage CMOS,
SiGe BiCMOS and RFCMOS for the manufacture of highly integrated
analog and mixed-signal semiconductor devices. The company's specialty
process technologies are designed for customers who seek to produce
analog and mixed-signal semiconductor devices that are smaller and
more highly integrated, power-efficient, feature-rich and cost-effective
than those produced using standard process technologies. Jazz customers
target the wireless and high-speed wireline communications, consumer
electronics, automotive and industrial end markets. Jazz's executive
offices and its U.S. wafer fabrication facilities are located in
Newport Beach, CA. For more information, please visit www.jazzsemi.com.
Jazz Company Contact
Jessica McNaughton
949/435-8086
jessica.mcnaughton@jazzsemi.com
Jazz Media Contact
Lauri Julian
949/715-3049
l.julian@mediaconnectpr.com
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